CHAMPAIGN, Ill. — Creating semiconductor structures for high-end optoelectronic devices just got easier, thanks to University of Illinois researchers.
The team developed a method to chemically etch patterned arrays in the semiconductor gallium arsenide, used in solar cells, lasers, light emitting diodes (LEDs), field effect transistors (FETs), capacitors and sensors. Led by electrical and computer engineering professor Xiuling Li, the researchers describe their technique in the journal Nano Letters.