New clues to mechanism for "colossal resistance" effects

Experiments at the US Department of Energy's Brookhaven National Laboratory, shed new light on some materials' ability to dramatically change their electrical resistance in the presence of an external magnetic or electric field. Small changes in resistance underlie many electronic devices, including some computer data storage systems. Understanding and applying dramatic resistance changes, known as colossal magnetoresistance, offers tremendous opportunities for the development of new technologies, including data-storage devices with increased data density and reduced power requirements.

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